DiodesZetex DMT N-Channel MOSFET, 16.1 A, 60 V Enhancement, 8-Pin VDFN
- RS Stock No.:
- 222-2880
- Mfr. Part No.:
- DMT64M8LCG-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2000 units)*
TWD47,000.00
(exc. GST)
TWD49,360.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from October 11, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 8000 | TWD23.50 | TWD47,000.00 |
| 10000 + | TWD23.00 | TWD46,000.00 |
*price indicative
- RS Stock No.:
- 222-2880
- Mfr. Part No.:
- DMT64M8LCG-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VDFN | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2.16W | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Typical Gate Charge Qg @ Vgs | 47.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.3mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Width | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VDFN | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2.16W | ||
Maximum Gate Source Voltage Vgs 10V | ||
Typical Gate Charge Qg @ Vgs 47.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 3.3mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Width 0.8mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
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