onsemi NTBGS3D N-Channel MOSFET, 127 A, 60 V Enhancement, 7-Pin TO-263 NTBGS3D5N06C
- RS Stock No.:
- 221-6704
- Mfr. Part No.:
- NTBGS3D5N06C
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD979.00
(exc. GST)
TWD1,027.95
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 590 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD195.80 | TWD979.00 |
| 10 - 95 | TWD191.00 | TWD955.00 |
| 100 - 245 | TWD186.40 | TWD932.00 |
| 250 - 495 | TWD181.40 | TWD907.00 |
| 500 + | TWD176.60 | TWD883.00 |
*price indicative
- RS Stock No.:
- 221-6704
- Mfr. Part No.:
- NTBGS3D5N06C
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 127A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | NTBGS3D | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 115W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 127A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series NTBGS3D | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 115W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 15.7mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 127A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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