Infineon OptiMOS 5 N-Channel MOSFET & Diode, 170 A, 100 V Enhancement, 3-Pin TO-263 IPB033N10N5LFATMA1
- RS Stock No.:
- 220-7380
- Mfr. Part No.:
- IPB033N10N5LFATMA1
- Manufacturer:
- Infineon
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TWD443.00
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TWD465.16
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 248 | TWD221.50 | TWD443.00 |
| 250 - 498 | TWD216.50 | TWD433.00 |
| 500 + | TWD203.00 | TWD406.00 |
*price indicative
- RS Stock No.:
- 220-7380
- Mfr. Part No.:
- IPB033N10N5LFATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET & Diode, 100V Maximum Drain Source Voltage, 170A Maximum Continuous Drain Current - IPB033N10N5LFATMA1
This MOSFET & diode is a surface-mount power device intended for high-current switching in demanding thermal environments. It combines an N-channel enhancement device with an integral diode in a TO-263 package, providing a Compact solution for power conversion and switching tasks across a wide temperature span.
Features and Benefits:
• 100 V rating enables operation in medium-voltage systems
• 3.3 mΩ RDS(on) reduces conduction losses under heavy load
• 170 A continuous drain current supports high-current applications
• 179 W power dissipation allows sustained high-power operation
• 1.2 V forward diode voltage minimises switching losses
• 20 V gate tolerance permits flexible gate-drive voltages
• 3.3 mΩ RDS(on) reduces conduction losses under heavy load
• 170 A continuous drain current supports high-current applications
• 179 W power dissipation allows sustained high-power operation
• 1.2 V forward diode voltage minimises switching losses
• 20 V gate tolerance permits flexible gate-drive voltages
Applications
• Suitable for server power-supply primary switching
• Ideal for synchronous rectification in converters
• Used for motor-drive half-bridge stages
• Can be used for battery-management high-current paths
• Used with DC-DC converters requiring low conduction loss
• Ideal for synchronous rectification in converters
• Used for motor-drive half-bridge stages
• Can be used for battery-management high-current paths
• Used with DC-DC converters requiring low conduction loss
What ambient temperature range can it handle during operation?
It is specified to operate from −55 °C up to +150 °C.
What package and mounting style should designers plan for?
It is supplied in a TO-263 package intended for surface mounting on PCB assemblies.
How does the device suit high-current thermal designs?
The combination of a 170 A continuous current rating and 179 W maximum dissipation permits use in designs where substantial heat must be managed through PCB copper and thermal pads.
What gate-drive constraints must be observed?
The gate-source voltage must not exceed 20 V to remain within safe operating limits.
Which conduction characteristic impacts power-loss calculations?
The low drain-source resistance of 3.3 mΩ is the key parameter for estimating conduction losses at operating current.
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