Infineon OptiMOS 5 N-Channel MOSFET & Diode, 170 A, 100 V Enhancement, 3-Pin TO-263 IPB033N10N5LFATMA1
- RS Stock No.:
- 220-7379
- Mfr. Part No.:
- IPB033N10N5LFATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 1000 units)*
TWD92,700.00
(exc. GST)
TWD97,340.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 1,000 unit(s) ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 4000 | TWD92.70 | TWD92,700.00 |
| 5000 + | TWD90.90 | TWD90,900.00 |
*price indicative
- RS Stock No.:
- 220-7379
- Mfr. Part No.:
- IPB033N10N5LFATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET & Diode, 100V Maximum Drain Source Voltage, 170A Maximum Continuous Drain Current - IPB033N10N5LFATMA1
Features and Benefits:
• 3.3 mΩ RDS(on) reduces conduction losses under heavy load
• 170 A continuous drain current supports high-current applications
• 179 W power dissipation allows sustained high-power operation
• 1.2 V forward diode voltage minimises switching losses
• 20 V gate tolerance permits flexible gate-drive voltages
Applications
• Ideal for synchronous rectification in converters
• Used for motor-drive half-bridge stages
• Can be used for battery-management high-current paths
• Used with DC-DC converters requiring low conduction loss
What ambient temperature range can it handle during operation?
What package and mounting style should designers plan for?
How does the device suit high-current thermal designs?
What gate-drive constraints must be observed?
Which conduction characteristic impacts power-loss calculations?
Related links
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-263 IPB033N10N5LFATMA1
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 150 V Enhancement, 3-Pin TO-263 IPB083N15N5LFATMA1
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 40 V Enhancement, 7-Pin TO-263 IPB011N04LGATMA1
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON BSC014N04LSTATMA1
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON IPC90N04S53R6ATMA1
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON IPC100N04S5L1R1ATMA1
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 80 V Enhancement, 8-Pin HSOG IAUS240N08S5N019ATMA1
