Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement TO-252 IRFR3410TRLPBF
- RS Stock No.:
- 218-3106
- Distrelec Article No.:
- 304-39-421
- Mfr. Part No.:
- IRFR3410TRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
TWD538.00
(exc. GST)
TWD564.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 17,700 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD26.90 | TWD538.00 |
| 760 - 1480 | TWD26.20 | TWD524.00 |
| 1500 + | TWD24.60 | TWD492.00 |
*price indicative
- RS Stock No.:
- 218-3106
- Distrelec Article No.:
- 304-39-421
- Mfr. Part No.:
- IRFR3410TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 31Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 31Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Width 2.39 mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.
RoHS Compliant
175°C Operating Temperature
Fast switching
Related links
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