Infineon CoolMOS CFD7 Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-220 IPP60R090CFD7XKSA1
- RS Stock No.:
- 214-9091
- Mfr. Part No.:
- IPP60R090CFD7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD1,040.00
(exc. GST)
TWD1,092.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 415 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | TWD208.00 | TWD1,040.00 |
| 15 - 20 | TWD202.60 | TWD1,013.00 |
| 25 + | TWD199.60 | TWD998.00 |
*price indicative
- RS Stock No.:
- 214-9091
- Mfr. Part No.:
- IPP60R090CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS CFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 1V | |
| Height | 9.45mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS CFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 1V | ||
Height 9.45mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Ultra-fast body diode
Low gate charge
Related links
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPA60R210CFD7XKSA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R170CFD7XKSA1
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247