Infineon CoolMOS CFD7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-247 IPW60R125CFD7XKSA1
- RS Stock No.:
- 214-9115
- Mfr. Part No.:
- IPW60R125CFD7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD1,054.00
(exc. GST)
TWD1,106.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 200 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD210.80 | TWD1,054.00 |
| 10 - 10 | TWD205.60 | TWD1,028.00 |
| 15 + | TWD202.60 | TWD1,013.00 |
*price indicative
- RS Stock No.:
- 214-9115
- Mfr. Part No.:
- IPW60R125CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS CFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 92W | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Width | 5.21mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS CFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 92W | ||
Height 21.1mm | ||
Length 16.13mm | ||
Width 5.21mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Ultra-fast body diode
Low gate charge
Related links
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