Infineon OptiMOS 5 N-Channel MOSFET, 176 A, 25 V Enhancement, 8-Pin TSDSON BSZ014NE2LS5IFATMA1

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Subtotal (1 reel of 5000 units)*

TWD163,500.00

(exc. GST)

TWD171,700.00

(inc. GST)

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Units
Per unit
Per Reel*
5000 - 20000TWD32.70TWD163,500.00
25000 +TWD31.70TWD158,500.00

*price indicative

RS Stock No.:
214-8983
Mfr. Part No.:
BSZ014NE2LS5IFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

176A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS 5

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.45mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

69W

Forward Voltage Vf

600mV

Maximum Gate Source Voltage Vgs

16V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.35mm

Width

6.1mm

Standards/Approvals

No

Height

1.2mm

Automotive Standard

No

The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. With the OptiMOS-5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Monolithic integrated Schottky like diode

100% avalanche tested

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