Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1
- RS Stock No.:
- 214-8977
- Mfr. Part No.:
- BSC0910NDIATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 10 units)*
TWD430.00
(exc. GST)
TWD451.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 4,960 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 1240 | TWD43.00 | TWD430.00 |
| 1250 - 2490 | TWD42.00 | TWD420.00 |
| 2500 + | TWD41.20 | TWD412.00 |
*price indicative
- RS Stock No.:
- 214-8977
- Mfr. Part No.:
- BSC0910NDIATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | TISON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.87V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Length | 5mm | |
| Width | 6 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type TISON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.87V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 1.1mm | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Length 5mm | ||
Width 6 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
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