Infineon OptiMOS Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 214-4403
- Mfr. Part No.:
- IPP023N08N5AKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD3,175.00
(exc. GST)
TWD3,334.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 400 unit(s) shipping from February 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD63.50 | TWD3,175.00 |
| 100 - 150 | TWD61.60 | TWD3,080.00 |
| 200 + | TWD59.70 | TWD2,985.00 |
*price indicative
- RS Stock No.:
- 214-4403
- Mfr. Part No.:
- IPP023N08N5AKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 133nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.93 mm | |
| Length | 10.2mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 133nC | ||
Maximum Operating Temperature 175°C | ||
Width 15.93 mm | ||
Length 10.2mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon OptiMOS 5 MOSFET is ideal for high frequency switching and synchronous rectification. It requires less paralleling.
It has reduced switching and conduction losses
It has low voltage overshoot
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