Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1
- RS Stock No.:
- 214-4366
- Mfr. Part No.:
- IPB120N08S403ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD1,096.00
(exc. GST)
TWD1,150.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 220 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | TWD219.20 | TWD1,096.00 |
| 250 - 495 | TWD213.60 | TWD1,068.00 |
| 500 + | TWD210.40 | TWD1,052.00 |
*price indicative
- RS Stock No.:
- 214-4366
- Mfr. Part No.:
- IPB120N08S403ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Series | OptiMOS -T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.02mm | |
| Height | 4.5mm | |
| Standards/Approvals | No | |
| Width | 9.27 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Series OptiMOS -T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.02mm | ||
Height 4.5mm | ||
Standards/Approvals No | ||
Width 9.27 mm | ||
Automotive Standard AEC-Q101 | ||
This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.
It is AEC Q101 qualified
Related links
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB120N06S402ATMA2