Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V P, 3-Pin TO-220 IPA80R1K4CEXKSA2
- RS Stock No.:
- 214-4355
- Mfr. Part No.:
- IPA80R1K4CEXKSA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 15 units)*
TWD391.50
(exc. GST)
TWD411.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | TWD26.10 | TWD391.50 |
| 75 + | TWD25.90 | TWD388.50 |
*price indicative
- RS Stock No.:
- 214-4355
- Mfr. Part No.:
- IPA80R1K4CEXKSA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS CE | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 31W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.85mm | |
| Width | 16.15 mm | |
| Standards/Approvals | No | |
| Length | 10.68mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS CE | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 31W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.85mm | ||
Width 16.15 mm | ||
Standards/Approvals No | ||
Length 10.68mm | ||
Automotive Standard No | ||
This Infineon CoolMOSE CE MOSFET uses revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
Related links
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