N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

RS Stock No.:: 914-0223
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 10 units)**

TWD338.00

(exc. GST)

TWD354.90

(inc. GST)

2340 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Pack**
10 - 620	TWD33.80	TWD338.00
630 - 1240	TWD32.90	TWD329.00
1250 +	TWD32.40	TWD324.00

**price indicative

RS Stock No.:: 914-0223
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

IPD80R1K0CE MOSFET CoolMOS CE
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.7 A
Maximum Drain Source Voltage	800 V
Series	CoolMOS™ CE
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	950 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Transistor Material	Si
Width	6.22mm
Typical Gate Charge @ Vgs	31 nC @ 10 V
Length	6.73mm
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Height	2.41mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

FREE delivery for orders over TWD2,857.00 (ex VAT)

Infineon CoolMOS™ CE Power MOSFET