Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1
- RS Stock No.:
- 214-4347
- Mfr. Part No.:
- IAUT300N10S5N015ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD462.00
(exc. GST)
TWD485.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 22 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 498 | TWD231.00 | TWD462.00 |
| 500 - 998 | TWD225.00 | TWD450.00 |
| 1000 + | TWD210.50 | TWD421.00 |
*price indicative
- RS Stock No.:
- 214-4347
- Mfr. Part No.:
- IAUT300N10S5N015ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 166nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 166nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 100V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IAUT300N10S5N015ATMA1
This MOSFET is a high-power N‑channel enhancement device designed for demanding switching and power conversion roles. It operates across a broad temperature span suitable for harsh conditions and is packaged for surface mounting in an industry-standard HSOF footprint, offering low forward drop for efficient conduction in high-current circuits.
Features and Benefits:
• 100V drain capability enables higher-voltage switching
• 1.5mΩ low Rds(on) reduces conduction losses during high currents
• 300A continuous current supports heavy-load applications
• 375W power dissipation allows sustained thermal loading
• 166nC gate charge balances switching speed and drive requirements
• 1.3V forward voltage limits voltage drop under load
• 1.5mΩ low Rds(on) reduces conduction losses during high currents
• 300A continuous current supports heavy-load applications
• 375W power dissipation allows sustained thermal loading
• 166nC gate charge balances switching speed and drive requirements
• 1.3V forward voltage limits voltage drop under load
Applications
• Suitable for high-current power converters and inverters
• Ideal for traction and motor-drive stages in power electronics
• Used for high-performance DC-DC converters in industrial systems
• Can be used for solid-state power distribution modules
• Suitable for fast switching stages in server power supplies
• Ideal for traction and motor-drive stages in power electronics
• Used for high-performance DC-DC converters in industrial systems
• Can be used for solid-state power distribution modules
• Suitable for fast switching stages in server power supplies
What gate-drive strength is required for efficient switching?
Expect gate drivers capable of sourcing and sinking sufficient current to charge 166nC within your targeted switching interval
slower drive increases switching losses.
How does the device handle elevated junction temperatures?
It is rated to operate from -55°C up to 175°C, permitting use in high-temperature environments when appropriate thermal management is applied.
What mounting considerations are important for thermal performance?
Surface-mount HSOF requires a well-designed PCB thermal land and heat-sinking strategy to dissipate up to 375W of power under heavy duty.
How does channel configuration affect circuit design?
As an N‑channel enhancement device, it is suited to low-side switching or synchronous rectification arrangements where the gate reference is near the source potential.
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF IAUT240N08S5N019ATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF IAUT260N10S5N019ATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 80 V Enhancement, 8-Pin PG-HSOF