Infineon OptiMOS 5 N-Channel MOSFET, 260 A, 100 V Enhancement, 8-Pin HSOF IAUT260N10S5N019ATMA1
- RS Stock No.:
- 218-2990
- Mfr. Part No.:
- IAUT260N10S5N019ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 500 more to save TWD2,500.00
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD381.00
(exc. GST)
TWD400.04
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 1,412 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 498 | TWD190.50 | TWD381.00 | - |
| 500 - 998 | TWD185.50 | TWD371.00 | TWD2,500.00 |
| 1000 + | TWD174.00 | TWD348.00 | TWD16,500.00 |
*price indicative
- RS Stock No.:
- 218-2990
- Mfr. Part No.:
- IAUT260N10S5N019ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 260A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 260A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS 5 Series MOSFET, 100V Drain Source Voltage, 260A Continuous Drain Current - IAUT260N10S5N019ATMA1
This MOSFET is a high-current N-channel enhancement device designed for surface-mounted power switching in demanding environments. It operates across a wide temperature range suited to harsh conditions and is built for applications requiring substantial drain current handling, tight on-resistance, and robust gate-voltage tolerance.
Features and Benefits:
• 1.9mΩ Rds(on) delivers reduced conduction losses
• 260A continuous drain current enables high-current handling
• 100V drain-source rating supports mid-voltage systems
• ±20V gate tolerance allows flexible drive voltages
• 300W power dissipation permits substantial thermal loading
• 1.3V forward voltage minimises diode conduction losses
• 260A continuous drain current enables high-current handling
• 100V drain-source rating supports mid-voltage systems
• ±20V gate tolerance allows flexible drive voltages
• 300W power dissipation permits substantial thermal loading
• 1.3V forward voltage minimises diode conduction losses
Applications
• Suitable for automotive powertrain and motor drives
• Ideal for high-current DC-DC conversion stages
• Used with battery management and energy storage systems
• Can be used for power distribution in electrified vehicles
• Suitable for surface-mount assemblies requiring Compact power MOSFETs
• Ideal for high-current DC-DC conversion stages
• Used with battery management and energy storage systems
• Can be used for power distribution in electrified vehicles
• Suitable for surface-mount assemblies requiring Compact power MOSFETs
What temperature extremes can it withstand in operation?
It is specified for continuous use from -55°C to +175°C.
What package and mounting style are provided for Compact assemblies?
It is supplied in an HSOF package intended for surface mounting with eight pins.
How does the device support automotive qualification needs?
It meets automotive AEC-Q101 requirements for components used in vehicle environments.
What channel type and mode determine switching behaviour?
It uses an N-channel device operating in enhancement mode for controlled conduction.
What electrical limits should be observed for gate and drain voltages?
Gate-source voltage must remain within ±20V and drain-source voltage within 100V.
Related links
- Infineon OptiMOS 5 N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF IAUT260N10S5N019ATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF IAUT240N08S5N019ATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 80 V Enhancement, 8-Pin PG-HSOF IAUT200N08S5N023ATMA1
- Infineon OptiMOS 3 N-Channel MOSFET 200 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON