Infineon OptiMOS 5 Type N-Channel MOSFET, 56 A, 150 V N, 8-Pin SuperSO
- RS Stock No.:
- 214-4329
- Mfr. Part No.:
- BSC160N15NS5ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 5000 units)*
TWD209,000.00
(exc. GST)
TWD219,450.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
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- Shipping from January 05, 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | TWD41.80 | TWD209,000.00 |
| 25000 + | TWD40.60 | TWD203,000.00 |
*price indicative
- RS Stock No.:
- 214-4329
- Mfr. Part No.:
- BSC160N15NS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SuperSO | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SuperSO | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 150V Maximum Drain Source Voltage, 56A Maximum Continuous Drain Current - BSC160N15NS5ATMA1
This MOSFET is a high-voltage N-channel power transistor designed for surface-mount applications where efficient switching and high current capability are required. It operates across a broad temperature range suitable for demanding thermal environments and is intended for designers needing a compact, high-performance device in a SuperSO package.
Features and Benefits:
• 150V drain rating enables high-voltage switching capability
• 16mΩ Rds(on) minimises conduction losses under load
• 56A continuous drain current supports high-current designs
• 19nC gate charge reduces drive energy and switching losses
• 96W power dissipation allows sustained thermal loading
• 16mΩ Rds(on) minimises conduction losses under load
• 56A continuous drain current supports high-current designs
• 19nC gate charge reduces drive energy and switching losses
• 96W power dissipation allows sustained thermal loading
Applications
• Suitable for DC-DC converters in industrial equipment
• Ideal for synchronous rectification in power supplies
• Used for motor-drive stages requiring high current
• Can be used for telecoms power distribution modules
• Suitable for high-voltage switching in server power rails
• Ideal for synchronous rectification in power supplies
• Used for motor-drive stages requiring high current
• Can be used for telecoms power distribution modules
• Suitable for high-voltage switching in server power rails
What thermal extremes can it withstand during operation?
It functions between -55°C and 150°C, allowing use in both cold-start and high-temperature environments.
How many connection pins does the package present?
The package provides eight pins to facilitate compact surface-mount circuit layouts.
What mechanical profile should designers allow for?
The device measures 1.2mm in height, 5.35mm in length and 6.1mm in width for footprint planning.
What gate voltage limits must be observed for reliable operation?
The device must not be driven beyond ±20V between gate and source to avoid damage.
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