STMicroelectronics STWA68N65DM6 N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247 STWA68N65DM6
- RS Stock No.:
- 212-2109
- Mfr. Part No.:
- STWA68N65DM6
- Manufacturer:
- STMicroelectronics
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 212-2109
- Mfr. Part No.:
- STWA68N65DM6
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Series | STWA68N65DM6 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 48 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Maximum Drain Source Resistance (Rds) | 0.059 Ω | |
| Mount Type | Through Hole | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Series STWA68N65DM6 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 48 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Maximum Drain Source Resistance (Rds) 0.059 Ω | ||
Mount Type Through Hole | ||
MDMesh M6 MOSFET N-CH
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converter.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
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