Vishay SiHG052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-247 SIHG052N60EF-GE3

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Subtotal (1 pack of 5 units)*

TWD1,000.00

(exc. GST)

TWD1,050.00

(inc. GST)

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Units
Per unit
Per Pack*
5 - 120TWD200.00TWD1,000.00
125 - 245TWD194.80TWD974.00
250 +TWD192.20TWD961.00

*price indicative

Packaging Options:
RS Stock No.:
204-7207
Mfr. Part No.:
SIHG052N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Series

SiHG052N60EF

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

101nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

15.87mm

Height

20.7mm

Standards/Approvals

No

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er)

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