Vishay SQJB46ELP_RC Type N-Channel MOSFET, 30 A, 40 V Enhancement, 4-Pin SO-8 SQJB46ELP-T1_GE3
- RS Stock No.:
- 210-5053
- Mfr. Part No.:
- SQJB46ELP-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD295.00
(exc. GST)
TWD309.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD29.50 | TWD295.00 |
| 750 - 1490 | TWD28.70 | TWD287.00 |
| 1500 + | TWD28.30 | TWD283.00 |
*price indicative
- RS Stock No.:
- 210-5053
- Mfr. Part No.:
- SQJB46ELP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQJB46ELP_RC | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 15.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.25 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQJB46ELP_RC | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 15.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Operating Temperature 175°C | ||
Width 6.25 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay N channel MOSFET has PowerPAK SO-8L package type.
R-C values for the electrical circuit in the foster/tank and cauer/filter configurations are included
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