Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB SIHP15N80AE-GE3
- RS Stock No.:
- 210-4992
- Mfr. Part No.:
- SIHP15N80AE-GE3
- Manufacturer:
- Vishay
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TWD608.00
(exc. GST)
TWD638.40
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | TWD121.60 | TWD608.00 |
| 15 - 20 | TWD118.20 | TWD591.00 |
| 25 + | TWD116.60 | TWD583.00 |
*price indicative
- RS Stock No.:
- 210-4992
- Mfr. Part No.:
- SIHP15N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220AB | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.24mm | |
| Width | 9.96mm | |
| Standards/Approvals | RoHS | |
| Length | 27.69mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220AB | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.24mm | ||
Width 9.96mm | ||
Standards/Approvals RoHS | ||
Length 27.69mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHP15N80AE-GE3
This power MOSFET is a high-voltage N-channel switching device designed for through-hole mounting in power conversion and control circuits. It operates across a wide temperature span and is intended for applications requiring elevated voltage withstand, moderate continuous current capability and gate-driven enhancement-mode switching. The device is supplied in a TO-220AB package with three pins for conventional board or heatsink installation.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching
• 13A continuous drain current supports sustained load delivery
• 304mΩ Rds(on) minimises conduction losses at switching
• 156W power dissipation allows significant thermal handling
• 53nC total gate charge keeps gate-drive requirements predictable
• 30V gate-source tolerance permits robust drive voltage margins
• 13A continuous drain current supports sustained load delivery
• 304mΩ Rds(on) minimises conduction losses at switching
• 156W power dissipation allows significant thermal handling
• 53nC total gate charge keeps gate-drive requirements predictable
• 30V gate-source tolerance permits robust drive voltage margins
Applications
• Suitable for high-voltage power supplies and converters
• Used for snubber and clamp circuits in industrial inverters
• Ideal for switched-mode power stages in lighting controls
• Can be used for motor drive front ends with through-hole mounting
• Used with laboratory test rigs requiring elevated voltage handling
• Used for snubber and clamp circuits in industrial inverters
• Ideal for switched-mode power stages in lighting controls
• Can be used for motor drive front ends with through-hole mounting
• Used with laboratory test rigs requiring elevated voltage handling
What ambient range can it tolerate in demanding installations?
It is specified to operate from -55°C up to 150°C, allowing use in both cold and high-temperature environments.
How is the component mounted for effective heat dissipation?
The TO-220AB package is designed for through-hole attachment and can be mounted to a heatsink for improved thermal performance.
What type of channel and conduction mode does it employ?
The device is an N-channel enhancement-mode MOSFET, requiring a positive gate drive to conduct.
Which electrical characteristic determines switching voltage drop?
The forward voltage parameter of 1.2V is indicative of the device’s conduction voltage behaviour during forward current flow.
Related links
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