Vishay E Type N-Channel Power MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SiHP080N60E-GE3
- RS Stock No.:
- 228-2875
- Mfr. Part No.:
- SiHP080N60E-GE3
- Manufacturer:
- Vishay
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TWD384.00
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD192.00 | TWD384.00 |
| 10 - 18 | TWD187.00 | TWD374.00 |
| 20 - 24 | TWD182.50 | TWD365.00 |
| 26 - 98 | TWD178.50 | TWD357.00 |
| 100 + | TWD173.50 | TWD347.00 |
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- RS Stock No.:
- 228-2875
- Mfr. Part No.:
- SiHP080N60E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 227W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 227W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 35A Continuous Drain Current - SiHP080N60E-GE3
This power MOSFET is a high-voltage, N-channel switching transistor intended for through-hole power applications where robust thermal and electrical performance are required. It operates across a wide ambient range, supports switching duties with moderate gate charge, and mounts in a TO-220AB package for straightforward heatsinking and assembly on conventional boards.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications
• 35A continuous current capability supports substantial load currents
• 80mΩ Rds(on) minimises conduction losses during power transfer
• 227W maximum dissipation allows sustained power handling
• 42nC typical gate charge yields predictable switching energy
• ±30V gate tolerance permits wide drive voltage margins
• 35A continuous current capability supports substantial load currents
• 80mΩ Rds(on) minimises conduction losses during power transfer
• 227W maximum dissipation allows sustained power handling
• 42nC typical gate charge yields predictable switching energy
• ±30V gate tolerance permits wide drive voltage margins
Applications
• Suitable for mains-derived SMPS and PFC circuits
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converters in telecoms
• Can be used for switch-mode lighting and ballast systems
• Employed in battery-charging and energy-storage converters
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converters in telecoms
• Can be used for switch-mode lighting and ballast systems
• Employed in battery-charging and energy-storage converters
What thermal range can the device tolerate in harsh environments?
It is rated to function from -55°C up to 150°C, permitting operation across industrial temperature extremes.
How is the device intended to be mounted and cooled?
The TO-220AB through-hole format accommodates direct heatsink attachment for effective thermal management and board-mounted power designs.
What gate drive limits should be observed during design?
Gate-source voltage must not exceed ±30V to avoid gate-oxide stress and ensure reliable switching.
Does the component suit low-voltage signal switching tasks?
Its 1.2V forward voltage and power-focused construction make it optimised for high-voltage power conversion rather than low-voltage signal switching.
Related links
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