Vishay SiHG052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 204-7206
- Mfr. Part No.:
- SIHG052N60EF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 500 units)*
TWD73,900.00
(exc. GST)
TWD77,595.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 500 | TWD147.80 | TWD73,900.00 |
| 1000 + | TWD143.40 | TWD71,700.00 |
*price indicative
- RS Stock No.:
- 204-7206
- Mfr. Part No.:
- SIHG052N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | SiHG052N60EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series SiHG052N60EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Height 20.7mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
Related links
- Vishay SiHG052N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SIHG052N60EF-GE3
- Vishay SiHP052N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay SiHP052N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHP052N60EF-GE3
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V, 3-Pin TO-247
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R060P7XKSA1
- IXYS HiperFET 48 A 3-Pin TO-264 IXFK48N60Q3
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPA60R060P7XKSA1