Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 200-6865
- Mfr. Part No.:
- SiR106ADP-T1-RE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD935.00
(exc. GST)
TWD981.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD37.40 | TWD935.00 |
| 750 - 1475 | TWD36.50 | TWD912.50 |
| 1500 + | TWD35.90 | TWD897.50 |
*price indicative
- RS Stock No.:
- 200-6865
- Mfr. Part No.:
- SiR106ADP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET Gen IV | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83.3W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Length | 5.15mm | |
| Height | 6.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET Gen IV | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83.3W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Length 5.15mm | ||
Height 6.15mm | ||
Automotive Standard No | ||
The Vishay SiR106ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR106ADP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin SO-8 SIR150DP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIDR638DP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR104ADP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212