Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8
- RS Stock No.:
- 200-6843
- Mfr. Part No.:
- SIJ150DP-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD752.50
(exc. GST)
TWD790.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD30.10 | TWD752.50 |
| 750 - 1475 | TWD29.30 | TWD732.50 |
| 1500 + | TWD28.80 | TWD720.00 |
*price indicative
- RS Stock No.:
- 200-6843
- Mfr. Part No.:
- SIJ150DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Package Type | SO-8 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Width | 0.98 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 45V | ||
Package Type SO-8 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Width 0.98 mm | ||
Automotive Standard No | ||
The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low Qg and Qoss reduce power loss and improve efficiency
Flexible leads provide resilience to mechanical stress
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
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