Vishay TrenchFET Gen IV N channel-Channel MOSFET, 461 A, 60 V N, 8-Pin PowerPAK 10 x 12 SIJK4610-T1-GE3
- RS Stock No.:
- 790-428
- Mfr. Part No.:
- SIJK4610-T1-GE3
- Manufacturer:
- Vishay
N
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 50 units)*
TWD16,995.00
(exc. GST)
TWD17,845.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from September 09, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 450 | TWD339.90 | TWD16,995.00 |
| 500 - 2450 | TWD210.20 | TWD10,510.00 |
| 2500 - 4950 | TWD163.20 | TWD8,160.00 |
| 5000 + | TWD156.50 | TWD7,825.00 |
*price indicative
- RS Stock No.:
- 790-428
- Mfr. Part No.:
- SIJK4610-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 461A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0012Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Operating Temperature | 150°C | |
| Length | 12mm | |
| Standards/Approvals | RoHS | |
| Width | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 461A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 10 x 12 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0012Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Operating Temperature 150°C | ||
Length 12mm | ||
Standards/Approvals RoHS | ||
Width 10mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N Channel MOSFET delivers superior performance for various applications. With a robust design, it minimises power loss and offers exceptional conduction efficiency, making it Ideal for power management systems.
Operating voltage rating of 60 V enhances system reliability
Features low on-state resistance for reduced power dissipation
Kelvin connection significantly lowers gate noise interference
Robust continuous drain current capability of 77 A ensures optimal performance
Related links
- Vishay TrenchFET Gen IV N channel-Channel MOSFET 80 V N, 8-Pin PowerPAK 10 x 12 SIJK4810-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SIS476DN-T1-GE3
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 25 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ186E-T1_GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 4-Pin SO-8 SIJ150DP-T1-GE3