Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die
- RS Stock No.:
- 188-4925
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2000 units)*
TWD130,000.00
(exc. GST)
TWD136,500.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 8000 | TWD65.00 | TWD130,000.00 |
| 10000 + | TWD63.70 | TWD127,400.00 |
*price indicative
- RS Stock No.:
- 188-4925
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | Triple Die | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.79V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Transistor Configuration | Common Drain | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 3 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type Triple Die | ||
Mount Type Surface | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.79V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Transistor Configuration Common Drain | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 3 | ||
Automotive Standard AEC-Q101 | ||
Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET.
Optimized triple die package
TrenchFET® power MOSFET
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