Vishay SiS128LDN Type N-Channel MOSFET, 33.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 3000 units)*

TWD43,500.00

(exc. GST)

TWD45,660.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from September 28, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Reel*
3000 - 3000TWD14.50TWD43,500.00
6000 +TWD14.10TWD42,300.00

*price indicative

RS Stock No.:
188-4888
Mfr. Part No.:
SiS128LDN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33.7A

Maximum Drain Source Voltage Vds

80V

Series

SiS128LDN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

20.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39W

Maximum Operating Temperature

150°C

Length

3.15mm

Standards/Approvals

No

Height

1.07mm

Automotive Standard

No

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

Related links