Vishay SiSS60DN Type N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212

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Bulk discount available

Subtotal (1 reel of 3000 units)*

TWD75,900.00

(exc. GST)

TWD79,680.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000TWD25.30TWD75,900.00
6000 +TWD24.50TWD73,500.00

*price indicative

RS Stock No.:
188-4904
Mfr. Part No.:
SISS60DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

181.8A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSS60DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.01mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

57nC

Maximum Power Dissipation Pd

65.8W

Forward Voltage Vf

0.68V

Maximum Operating Temperature

150°C

Height

0.78mm

Standards/Approvals

No

Length

3.3mm

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET

SKYFET® with monolithic Schottky diode

Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching

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