Vishay TrenchFET Type P-Channel MOSFET, 2.68 A, 20 V Enhancement, 6-Pin SC-70 SQA401EEJ-T1_GE3
- RS Stock No.:
- 178-3886
- Mfr. Part No.:
- SQA401EEJ-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD517.50
(exc. GST)
TWD543.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 19, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD20.70 | TWD517.50 |
| 750 - 1475 | TWD20.20 | TWD505.00 |
| 1500 + | TWD20.00 | TWD500.00 |
*price indicative
- RS Stock No.:
- 178-3886
- Mfr. Part No.:
- SQA401EEJ-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.68A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13.6W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.35mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.68A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13.6W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.35mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
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