Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220 IRF1010EPBF
- RS Stock No.:
- 178-1449
- Mfr. Part No.:
- IRF1010EPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD1,165.00
(exc. GST)
TWD1,223.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | TWD23.30 | TWD1,165.00 |
| 250 + | TWD19.90 | TWD995.00 |
*price indicative
- RS Stock No.:
- 178-1449
- Mfr. Part No.:
- IRF1010EPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF
This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.
Features & Benefits
• Low RDS(on) contributes to minimal power loss at high currents
• High continuous drain current capability of up to 84A enhances efficiency
• Compact TO-220AB package allows for easy mounting
• Fast switching capabilities improve overall circuit performance
• Fully avalanche rated for added device protection
Applications
• Power supply circuits for efficient voltage regulation
• Motor control systems for precise operation
• Driver circuits in high current
• Signal amplification in electronic devices
What are the thermal resistance values for this product?
The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.
Can it operate safely in environments with high temperatures?
Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.
What type of current can it handle at high temperatures?
At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.
How does the gate charge affect its performance?
With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRF1010EZPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRF1010ESTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS FD Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS FD Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-247 STW88N65M5