Vishay IRFP264 Type N-Channel Power MOSFET, 38 A, 250 V Enhancement, 3-Pin TO-247AC IRFP264PBF
- RS Stock No.:
- 178-0790
- Mfr. Part No.:
- IRFP264PBF
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
TWD3,357.50
(exc. GST)
TWD3,525.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 425 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 100 | TWD134.30 | TWD3,357.50 |
| 125 + | TWD120.90 | TWD3,022.50 |
*price indicative
- RS Stock No.:
- 178-0790
- Mfr. Part No.:
- IRFP264PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-247AC | |
| Series | IRFP264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 280W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 210nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31mm | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-247AC | ||
Series IRFP264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 280W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 210nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.31mm | ||
Length 15.87mm | ||
Height 20.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRFP264 Series Power MOSFET, 250V Drain Source Voltage, 38A Drain Current - IRFP264PBF
This power MOSFET is a through-hole N-channel enhancement device designed for switching and power control in industrial electronics. It operates at high voltage and is suited to applications requiring substantial current handling and temperature resilience.
Features and Benefits:
• 250V drain-source rating enables high-voltage switching capability • 38 A continuous drain current supports heavy load handling • 75 mΩ RDS(on) minimises conduction losses for efficiency gains • 280W power dissipation allows sustained thermal loading • 210 nC typical gate charge facilitates predictable switching behaviour • 150 °C maximum operating temperature extends thermal margin in harsh environments
Applications
• Suitable for motor-drive switching in automation systems • Ideal for power supplies and inverters in industrial equipment • Used for load switching in electrical control panels • Can be used for high-voltage test rigs and bench power stages
What mounting style is required for installation?
The device uses a through-hole configuration in a TO-247AC package, requiring PCB holes and appropriate heatsinking for thermal management.
What gate voltage limits should designers observe?
Maximum gate-source excursion is 20 V, so drive circuitry must constrain gate swings within this range.
How does it behave under extreme cold?
It is specified to operate down to -55 °C, allowing use in low-temperature environments without loss of rated function.
What pin count and thermal handling should be considered for chassis design?
The component has three pins and a package form that facilitates direct heatsink attachment to exploit its 280W dissipation capability.
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