Vishay IRFPG50 Type N-Channel MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247 IRFPG50PBF
- RS Stock No.:
- 541-1095
- Distrelec Article No.:
- 301-91-596
- Mfr. Part No.:
- IRFPG50PBF
- Manufacturer:
- Vishay
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TWD150.00
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TWD157.50
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 6 | TWD150.00 |
| 7 - 12 | TWD146.00 |
| 13 + | TWD144.00 |
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- RS Stock No.:
- 541-1095
- Distrelec Article No.:
- 301-91-596
- Mfr. Part No.:
- IRFPG50PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-247 | |
| Series | IRFPG50 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Maximum Power Dissipation Pd | 190W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.31mm | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-247 | ||
Series IRFPG50 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Maximum Power Dissipation Pd 190W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.31mm | ||
Height 20.7mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
Vishay IRFPG50 Series Power MOSFET, 1000V Drain Source Voltage, 6.1A Continuous Drain Current - IRFPG50PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for power switching and control in industrial electronics. It is supplied for through-hole mounting in a TO-247AC package and is suitable for applications that require substantial voltage hold-off and thermal headroom while operating across a wide ambient temperature range.
Features and Benefits:
• Withstands up to 1000V for high-voltage switching applications
• Continuous drain current rating of 6.1 A enables sustained load handling
• Drain-source on-resistance of 2 Ω reduces conduction losses under load
• Maximum power dissipation of 190W allows higher power throughput
• Typical gate charge of 190 nC supports predictable switching behaviour
• Gate-source limit of 20V protects the gate from excessive drive voltage
• Continuous drain current rating of 6.1 A enables sustained load handling
• Drain-source on-resistance of 2 Ω reduces conduction losses under load
• Maximum power dissipation of 190W allows higher power throughput
• Typical gate charge of 190 nC supports predictable switching behaviour
• Gate-source limit of 20V protects the gate from excessive drive voltage
Applications
• Suitable for high-voltage motor-drive stages in automation systems
• Ideal for switching supplies requiring robust voltage margins
• Used with power converters in industrial electrical control panels
• Can be used for load switching in mechanical actuation systems
• Ideal for switching supplies requiring robust voltage margins
• Used with power converters in industrial electrical control panels
• Can be used for load switching in mechanical actuation systems
What mounting method is required for installation?
It requires a through-hole mounting approach and is supplied in a TO-247AC style package that is compatible with standard through-hole heatsinking arrangements.
How does it behave in extreme temperature environments?
It is specified to operate from -55 °C up to 150 °C, providing capability for use in both sub-zero and elevated-temperature conditions without derating outside those limits.
What are the gate-drive constraints to observe?
The maximum permissible gate-source voltage is 20 V, so gate-drive circuitry should be designed to avoid exceeding this threshold.
What thermal management considerations are necessary?
With a maximum power dissipation of 190 W, effective heatsinking and thermal coupling to a chassis or dedicated sink are necessary to maintain junction temperatures within safe limits.
Related links
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