onsemi Dual NVMFD5C446NL 2 Type N-Channel MOSFET, 145 A, 40 V Enhancement, 8-Pin DFN
- RS Stock No.:
- 172-3301
- Mfr. Part No.:
- NVMFD5C446NLT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 1500 units)*
TWD109,650.00
(exc. GST)
TWD115,140.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | TWD73.10 | TWD109,650.00 |
| 3000 + | TWD71.70 | TWD107,550.00 |
*price indicative
- RS Stock No.:
- 172-3301
- Mfr. Part No.:
- NVMFD5C446NLT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMFD5C446NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMFD5C446NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications.
Low on-resistance
Minimal conduction losses
High current capability
Robust load performance
Voltage overstress safeguard
Applications
Low Side Driver
High Side Driver
Motor drive
Automotive powertrain
Automotive HVAC motors
ABS pressure pumps
Related links
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