onsemi Dual NVMFD5C446NL 2 Type N-Channel MOSFET, 145 A, 40 V Enhancement, 8-Pin DFN NVMFD5C446NLT1G
- RS Stock No.:
- 172-3377
- Mfr. Part No.:
- NVMFD5C446NLT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD1,033.00
(exc. GST)
TWD1,084.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 580 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 370 | TWD103.30 | TWD1,033.00 |
| 380 - 740 | TWD100.80 | TWD1,008.00 |
| 750 + | TWD99.20 | TWD992.00 |
*price indicative
- RS Stock No.:
- 172-3377
- Mfr. Part No.:
- NVMFD5C446NLT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMFD5C446NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMFD5C446NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 6.1mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications.
Low on-resistance
Minimal conduction losses
High current capability
Robust load performance
Voltage overstress safeguard
Applications
Low Side Driver
High Side Driver
Motor drive
Automotive powertrain
Automotive HVAC motors
ABS pressure pumps
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