ROHM Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220FM R6020KNX
- RS Stock No.:
- 172-0468
- Mfr. Part No.:
- R6020KNX
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD418.00
(exc. GST)
TWD438.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 340 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD83.60 | TWD418.00 |
| 50 - 95 | TWD81.40 | TWD407.00 |
| 100 - 195 | TWD79.20 | TWD396.00 |
| 200 - 395 | TWD77.40 | TWD387.00 |
| 400 + | TWD75.00 | TWD375.00 |
*price indicative
- RS Stock No.:
- 172-0468
- Mfr. Part No.:
- R6020KNX
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220FM | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.360Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Width | 4.8 mm | |
| Standards/Approvals | RoHS | |
| Height | 15.4mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220FM | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.360Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Width 4.8 mm | ||
Standards/Approvals RoHS | ||
Height 15.4mm | ||
- COO (Country of Origin):
- JP
R6020KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
Low on-resistance.
Ultra fast switching speed.
Parallel use is easy.
Pb-free lead plating.
Related links
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