ROHM Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-220FM R6007ENX
- RS Stock No.:
- 172-0548
- Mfr. Part No.:
- R6007ENX
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD304.00
(exc. GST)
TWD319.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 320 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD30.40 | TWD304.00 |
| 50 - 90 | TWD29.60 | TWD296.00 |
| 100 - 190 | TWD28.90 | TWD289.00 |
| 200 - 390 | TWD28.10 | TWD281.00 |
| 400 + | TWD27.40 | TWD274.00 |
*price indicative
- RS Stock No.:
- 172-0548
- Mfr. Part No.:
- R6007ENX
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220FM | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.20Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.8 mm | |
| Length | 10.3mm | |
| Height | 15.4mm | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220FM | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.20Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.8 mm | ||
Length 10.3mm | ||
Height 15.4mm | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
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