Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8

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Bulk discount available

Subtotal (1 reel of 4000 units)*

TWD44,800.00

(exc. GST)

TWD47,040.00

(inc. GST)

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Units
Per unit
Per Reel*
4000 - 16000TWD11.20TWD44,800.00
20000 +TWD10.80TWD43,200.00

*price indicative

RS Stock No.:
170-2265
Mfr. Part No.:
IRF7343TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

55V

Series

IRF7343PbF

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

0.96V

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Height

1.5mm

Width

4 mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

Non Compliant

The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.

RoHS Compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

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