Microchip TC6320 Type P, Type N-Channel MOSFET, 1 mA, 200 V Enhancement, 8-Pin SOIC TC6320TG-G
- RS Stock No.:
- 333-204
- Mfr. Part No.:
- TC6320TG-G
- Manufacturer:
- Microchip
Subtotal (1 reel of 3300 units)*
TWD299,970.00
(exc. GST)
TWD314,952.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
New product - Preorder today
- Shipping from November 23, 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3300 + | TWD90.90 | TWD299,970.00 |
*price indicative
- RS Stock No.:
- 333-204
- Mfr. Part No.:
- TC6320TG-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOIC | |
| Series | TC6320 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOIC | ||
Series TC6320 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is high voltage, low threshold N channel and P channel MOSFETs in 8 lead VDFN and SOIC packages. Both MOSFETs have integrated gate to source resistors and gate to source Zener diode clamps which are desired for high voltage applications. It is a complimentary, high speed, high voltage, gate clamped N channel and P channel MOSFET pair, which utilizes an advanced vertical DMOS structure and a well proven silicon gate manufacturing process.
Integrated gate to source resistor
Integrated gate to source zener diode
Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
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