Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3
- RS Stock No.:
- 169-5791
- Mfr. Part No.:
- SIHG20N50E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
TWD2,655.00
(exc. GST)
TWD2,787.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 175 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | TWD106.20 | TWD2,655.00 |
| 50 - 75 | TWD103.90 | TWD2,597.50 |
| 100 + | TWD101.60 | TWD2,540.00 |
*price indicative
- RS Stock No.:
- 169-5791
- Mfr. Part No.:
- SIHG20N50E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247AC | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31mm | |
| Standards/Approvals | RoHS | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247AC | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 5.31mm | ||
Standards/Approvals RoHS | ||
Height 20.82mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series E Power MOSFET, 500V Drain Source Voltage, 19A Continuous Drain Current - SIHG20N50E-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for power conversion and switching applications. It offers robust switching capability suitable for through-hole mounting in conventional assemblies and operates across a wide ambient temperature range for demanding electronic environments.
Features and Benefits:
• 500V drain capability supports high-voltage power stages
• 19A continuous drain current enables substantial load handling
• 179W power dissipation allows high-power operation
• 184mΩ maximum RDS(on) minimises conduction losses
• 46nC typical gate charge reduces switching control energy
• 30V maximum gate rating permits standard gate drive voltages
• 19A continuous drain current enables substantial load handling
• 179W power dissipation allows high-power operation
• 184mΩ maximum RDS(on) minimises conduction losses
• 46nC typical gate charge reduces switching control energy
• 30V maximum gate rating permits standard gate drive voltages
Applications
• Suitable for power electronics MOSFETs for switching supplies
• Ideal for through-hole TO-247 power transistor 500V assemblies
• Used with high-voltage inverter and motor-drive stages
• Can be used for industrial power supplies and converters
• Used for legacy through-hole repairs and prototype boards
• Ideal for through-hole TO-247 power transistor 500V assemblies
• Used with high-voltage inverter and motor-drive stages
• Can be used for industrial power supplies and converters
• Used for legacy through-hole repairs and prototype boards
What are the thermal limits for deployment in hot environments?
It is specified to function from -55°C up to 150°C, permitting operation in elevated-temperature systems.
Which mounting method is required for reliable installation?
The device uses through-hole mounting in a TO-247AC package, compatible with standard wave or manual soldering processes and heatsinking arrangements.
What gate-drive considerations should I allow for during design?
Design for a maximum gate-source rating of 30V and account for a typical gate charge of 46nC when sizing drive circuitry.
How does the part comply with material restrictions for manufacturing?
It is RoHS-compliant, meeting material restriction requirements for environmental regulations.
Related links
- Vishay E Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12