N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

RS Stock No.:: 168-4759
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

The image is for reference only, please refer to product details and specifications

Price Each (In a Tube of 10)**

TWD843.60

(exc. GST)

TWD885.78

(inc. GST)

Temporarily out of stock - back order for despatch 18/09/2025, delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Tube**
10 - 10	TWD843.60	TWD8,436.00
20 - 30	TWD825.30	TWD8,253.00
40 +	TWD807.00	TWD8,070.00

**price indicative

RS Stock No.:: 168-4759
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

IXFN80N60P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Fast Intrinsic Rectifie
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Length	38.23mm
Typical Gate Charge @ Vgs	190 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	25.07mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series