ROHM Dual 2 N-Channel Power MOSFET, 1 A, 30 V Enhancement, 6-Pin TSMT
- RS Stock No.:
- 168-2133
- Mfr. Part No.:
- QS6K1TR
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD600.00
(exc. GST)
TWD630.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 24, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD24.00 | TWD600.00 |
| 750 - 1475 | TWD23.40 | TWD585.00 |
| 1500 + | TWD23.00 | TWD575.00 |
*price indicative
- RS Stock No.:
- 168-2133
- Mfr. Part No.:
- QS6K1TR
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 238mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 950μm | |
| Width | 1.8mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 238mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 950μm | ||
Width 1.8mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Complex type MOSFETs(N+N) are MADE as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering Compact types, high-power types and complex types to meet various needs in the market.
2.5Ｖ-drive type
Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Applications:
Portable Data Terminal
Coin Processing Machines
Digital Multimeter: Handy Type
Motor Control: Brushless DC
PLC (Programmable Logic Controller)
AC Servo
Network Attached Storage
DVR/DVS
Motor Control: Stepper Motor
Motor Control: Brushed DC
POS (Point Of Sales System)
Electric Bike
Embedded PC
Smart Meter
Surveillance Camera
X-ray Inspection Machine for Security
Surveillance Camera for Network
Intercom / Baby Monitor
Machine Vision Camera for Industrial
Fingerprint Authentication Device
GFCI(Ground Fault Circuit Interrupter)
Digital Multimeter: Bench Type
Display for EMS
Solar Power Inverters
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