ROHM RQ6E050AJ Type N-Channel MOSFET, 5 A, 30 V Enhancement, 6-Pin TSMT-6 RQ6E050AJTCR
- RS Stock No.:
- 133-3306
- Mfr. Part No.:
- RQ6E050AJTCR
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD317.50
(exc. GST)
TWD333.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Being discontinued
- Final 1,575 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | TWD12.70 | TWD317.50 |
| 125 - 225 | TWD12.50 | TWD312.50 |
| 250 - 1225 | TWD12.20 | TWD305.00 |
| 1250 - 2475 | TWD11.80 | TWD295.00 |
| 2500 + | TWD11.50 | TWD287.50 |
*price indicative
- RS Stock No.:
- 133-3306
- Mfr. Part No.:
- RQ6E050AJTCR
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT-6 | |
| Series | RQ6E050AJ | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | RoHS | |
| Height | 0.95mm | |
| Width | 1.8 mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT-6 | ||
Series RQ6E050AJ | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals RoHS | ||
Height 0.95mm | ||
Width 1.8 mm | ||
- COO (Country of Origin):
- JP
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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