Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

RS Stock No.:: 165-8742
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

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2950 In stock for delivery within 6 working days

Price (VAT excluded) Each (On a Reel of 3000)

TWD6.70

(exc. GST)

TWD7.04

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	TWD6.70	TWD20,100.00
15000 +	TWD6.30	TWD18,900.00

*price indicative

RS Stock No.:: 165-8742
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	20 V
Package Type	U-DFN2030
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	28 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	3.05mm
Typical Gate Charge @ Vgs	16 nC @ 4.5 V
Width	2.05mm
Height	0.6mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

Dual N-Channel MOSFET, Diodes Inc.