Vishay Si8489EDB Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- RS Stock No.:
- 165-6345
- Mfr. Part No.:
- SI8489EDB-T2-E1
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD21,900.00
(exc. GST)
TWD22,980.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 15, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD7.30 | TWD21,900.00 |
| 6000 + | TWD7.10 | TWD21,300.00 |
*price indicative
- RS Stock No.:
- 165-6345
- Mfr. Part No.:
- SI8489EDB-T2-E1
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MICRO FOOT | |
| Series | Si8489EDB | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1mm | |
| Standards/Approvals | No | |
| Length | 1mm | |
| Height | 268μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MICRO FOOT | ||
Series Si8489EDB | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Width 1mm | ||
Standards/Approvals No | ||
Length 1mm | ||
Height 268μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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