Vishay TrenchFET Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
- RS Stock No.:
- 180-7724
- Mfr. Part No.:
- SI8802DB-T2-E1
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 25 units)*
TWD265.00
(exc. GST)
TWD278.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 8,950 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD10.60 | TWD265.00 |
| 750 - 1475 | TWD10.20 | TWD255.00 |
| 1500 + | TWD10.10 | TWD252.50 |
*price indicative
- RS Stock No.:
- 180-7724
- Mfr. Part No.:
- SI8802DB-T2-E1
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 8V | |
| Series | TrenchFET | |
| Package Type | MICRO FOOT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 0.6W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.8 mm | |
| Standards/Approvals | No | |
| Length | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 8V | ||
Series TrenchFET | ||
Package Type MICRO FOOT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 0.6W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Operating Temperature 150°C | ||
Width 0.8 mm | ||
Standards/Approvals No | ||
Length 0.8mm | ||
Automotive Standard No | ||
The Vishay Siliconix SI8802DB series TrenchFET N channel power MOSFET has drain to source voltage of 8 V. It is maximum power dissipation of 0.9 W and mainly used in Load switch with low voltage drop.
Low on-resistance
Halogen free
Pb free
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