Vishay SiHF630S Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 165-5995
- Mfr. Part No.:
- SIHF630STRL-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 800 units)*
TWD21,760.00
(exc. GST)
TWD22,848.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | TWD27.20 | TWD21,760.00 |
| 1600 - 2400 | TWD26.60 | TWD21,280.00 |
| 3200 + | TWD26.00 | TWD20,800.00 |
*price indicative
- RS Stock No.:
- 165-5995
- Mfr. Part No.:
- SIHF630STRL-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SiHF630S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 2V | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SiHF630S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 2V | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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