Vishay TrenchFET Type N-Channel MOSFET, 150 A, 200 V Enhancement, 3-Pin TO-263

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Bulk discount available

Subtotal (1 tube of 800 units)*

TWD57,680.00

(exc. GST)

TWD60,560.00

(inc. GST)

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Units
Per unit
Per Tube*
800 - 3200TWD72.10TWD57,680.00
4000 +TWD70.70TWD56,560.00

*price indicative

RS Stock No.:
228-2986
Mfr. Part No.:
SUM90100E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

72.8nC

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 200-V (D-S) MOSFET.

100 % Rg and UIS tested

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