Infineon OptiMOS N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TSDSON BSZ060NE2LSATMA1

RS Stock No.:: 165-5979
Mfr. Part No.:: BSZ060NE2LSATMA1
Manufacturer:: Infineon

Infineon OptiMOS N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TSDSON BSZ060NE2LSATMA1

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Subtotal (1 reel of 5000 units)*

TWD47,000.00

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TWD49,350.00

(inc. GST)

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Units	Per unit	Per Reel*
5000 - 20000	TWD9.40	TWD47,000.00
25000 +	TWD9.20	TWD46,000.00

*price indicative

RS Stock No.:: 165-5979
Mfr. Part No.:: BSZ060NE2LSATMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	25V
	Series	OptiMOS
	Package Type	TSDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	8.1mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	870mV
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	9.1nC
	Maximum Power Dissipation Pd	26W
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Width	3.4mm
	Standards/Approvals	No
	Length	3.4mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 25V
	Series OptiMOS
	Package Type TSDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 8.1mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 870mV
	Maximum Gate Source Voltage Vgs -20V, +20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 9.1nC
	Maximum Power Dissipation Pd 26W
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Width 3.4mm
	Standards/Approvals No
	Length 3.4mm
	Automotive Standard No

RoHS Status: Not Applicable

COO (Country of Origin):: CN

Infineon OptiMOS Series MOSFET, 25V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ060NE2LSATMA1

This MOSFET is a surface-mount N-channel transistor designed for power switching and management in compact electronic systems. It operates across a wide temperature span and is intended for high-current applications where low conduction losses and efficient switching are required. The device is supplied in an 8-pin TSDSON package suited to dense assemblies and thermal routing on PCB layouts.

Features and Benefits:

• Very low on-resistance of 8.1mΩ reduces conduction losses
• Continuous drain current rating of 40A supports high-current loads
• Maximum power dissipation of 26W enables substantial heat handling
• Typical gate charge of 9.1nC allows efficient switching performance
• Forward voltage of 0.87V minimises voltage drop under load
• Gate-source voltage tolerance up to 20V offers flexible drive margins

Applications

• Suitable for synchronous buck converter power stages
• Ideal for high-current DC-DC regulator modules
• Used with server and telecoms power distribution systems
• Can be used for battery management and charging circuits
• Appropriate for motor drive pre-driver stages

What thermal range can I expect for deployment?

The device is specified to operate from -55°C up to 150°C, allowing use in environments with wide temperature variation.

How does the package aid PCB integration?

The TSDSON form factor provides a low-profile, surface-mount footprint that facilitates close component placement and direct thermal conduction to PCB copper.

What gate-drive considerations are required?

The transistor supports gate-source voltages up to 20V

use gate drivers that remain within this limit while delivering sufficient charge for fast switching.

How many pins are available for layout purposes?

There are eight pins, enabling multiple connections for drain, source and gate routing to optimise current paths and thermal performance.