Infineon OptiMOS Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TSDSON BSZ060NE2LSATMA1
- RS Stock No.:
- 827-5296
- Mfr. Part No.:
- BSZ060NE2LSATMA1
- Manufacturer:
- Infineon
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TWD752.50
(exc. GST)
TWD790.00
(inc. GST)
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In Stock
- Plus 24,875 unit(s) shipping from August 10, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 1225 | TWD30.10 | TWD752.50 |
| 1250 + | TWD27.80 | TWD695.00 |
*price indicative
- RS Stock No.:
- 827-5296
- Mfr. Part No.:
- BSZ060NE2LSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | TSDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Power Dissipation Pd | 26W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.87V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type TSDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Power Dissipation Pd 26W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.87V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS Series MOSFET, 25V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ060NE2LSATMA1
This MOSFET is a surface-mount N-channel transistor designed for power switching and management in compact electronic systems. It operates across a wide temperature span and is intended for high-current applications where low conduction losses and efficient switching are required. The device is supplied in an 8-pin TSDSON package suited to dense assemblies and thermal routing on PCB layouts.
Features and Benefits:
• Very low on-resistance of 8.1mΩ reduces conduction losses
• Continuous drain current rating of 40A supports high-current loads
• Maximum power dissipation of 26W enables substantial heat handling
• Typical gate charge of 9.1nC allows efficient switching performance
• Forward voltage of 0.87V minimises voltage drop under load
• Gate-source voltage tolerance up to 20V offers flexible drive margins
• Continuous drain current rating of 40A supports high-current loads
• Maximum power dissipation of 26W enables substantial heat handling
• Typical gate charge of 9.1nC allows efficient switching performance
• Forward voltage of 0.87V minimises voltage drop under load
• Gate-source voltage tolerance up to 20V offers flexible drive margins
Applications
• Suitable for synchronous buck converter power stages
• Ideal for high-current DC-DC regulator modules
• Used with server and telecoms power distribution systems
• Can be used for battery management and charging circuits
• Appropriate for motor drive pre-driver stages
• Ideal for high-current DC-DC regulator modules
• Used with server and telecoms power distribution systems
• Can be used for battery management and charging circuits
• Appropriate for motor drive pre-driver stages
What thermal range can I expect for deployment?
The device is specified to operate from -55°C up to 150°C, allowing use in environments with wide temperature variation.
How does the package aid PCB integration?
The TSDSON form factor provides a low-profile, surface-mount footprint that facilitates close component placement and direct thermal conduction to PCB copper.
What gate-drive considerations are required?
The transistor supports gate-source voltages up to 20V
use gate drivers that remain within this limit while delivering sufficient charge for fast switching.
How many pins are available for layout purposes?
There are eight pins, enabling multiple connections for drain, source and gate routing to optimise current paths and thermal performance.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ0904NSIATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON BSC009NE2LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON
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- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON