Toshiba Type N-Channel MOSFET, 20 A, 250 V Enhancement, 3-Pin TO-220 TK20A25D,S5X(J
- RS Stock No.:
- 144-5200
- Mfr. Part No.:
- TK20A25D,S5X(J
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD473.00
(exc. GST)
TWD496.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 30 unit(s) shipping from February 04, 2026
- Plus 300 unit(s) shipping from April 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD47.30 | TWD473.00 |
| 50 - 90 | TWD46.00 | TWD460.00 |
| 100 - 490 | TWD45.20 | TWD452.00 |
| 500 - 990 | TWD44.00 | TWD440.00 |
| 1000 + | TWD42.90 | TWD429.00 |
*price indicative
- RS Stock No.:
- 144-5200
- Mfr. Part No.:
- TK20A25D,S5X(J
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Height | 15mm | |
| Width | 4.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10mm | ||
Height 15mm | ||
Width 4.5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
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